S1PDB25005 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Single Phase Bridge Rectifiers

S1PDB25005 thru S1PDB2516
Single Phase Bridge Rectifiers
Dimensions
S1PDB25005
S1PDB2502
S1PDB2504
S1PDB2506
S1PDB2508
S1PDB2512
S1PDB2516
VRRM
V
50
200
400
600
800
1200
1600
VRWS
V
35
140
280
420
560
840
1120
VDC
V
50
200
400
600
800
1200
1600
Symbol
Characteristics
Maximum Ratings
I(AV)
Maximum Average Forward
Rectified Current @TC=60^oC (With Heatsink)
25.0
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
350
VF
IR
I²t
CJ
ROJC
TJ
TSTG
Maximum Forward Voltage At 12.5A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
I²t Rating For Fusing (t < 8.3 ms), (Note 1)
Typical Junction Capacitance Per Element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
1.1
5.0
500
374
130
1.3
-55 to +150
-55 to +150
NOTES: 1. Measured At Non-repetitive, For Greater Than 1ms And Less Than 8.3ms.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
Unit
A
A
V
uA
A²S
pF
o_C/W
o_C
o_C
FEATURES
* Rating to 1600V PRV
* High efficiency
* Glass passivated chip junction
* Electrically isolated metal case for maximum heat
dissipation
* RoHS compliant
MECHANICAL DATA
* Case: Molded plastic with Heatsink internally
mounted in the bridge encapsulation
* Polarity: As marked on Body
* Mounting: Hole for # 10 screw
* Weight: 18 grams
P1
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