MURB1610CT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 16A SURFACE MOUNT SUPER-FAST RECTIFIER

MURB1610CT thru MURB1620CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MURB1610CT 100
70
100
MURB1620CT 200 140 200
Dimensions TO-263(D²PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current
IFSM
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
@TC=120 ^oC
TP=10ms
TP=8.3ms
Maximum Forward Voltage
VF Pulse Width=300us
Duty Cycle
IF=8A
IF=8A
IF=16A
IF=16A
@TJ=25 ^oC
@TJ=125^oC
@TJ=25 ^oC
@TJ=125^oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=100^oC
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance
TJ, TSTG Operating And Storage Temperature Range
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Maximum Ratings
16
80
90
1.1
1.0
1.25
1.20
5
100
80
30
3.0
-55 to +150
Unit
A
A
V
uA
pF
ns
o_C/W
o_C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-263 molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any