MUR2040C Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR2040C(A)T thru MUR2060C(A)T
Ultra Fast Recovery Diodes
2(TAB)
3
12
MUR20**DT
K1 A1K2 A2
123
MUR20**CT
AC A
1 23
MUR20**AT
C AC
1 23
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRWM VDC
V
V
V
MUR2040C(A/D)T 400
280 400
MUR2060C(A/D)T 600
420 600
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
Maximum Ratings
Unit
I(AV) Maximum Average Forward Rectified Current @TC=95^oC
20
A
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
125
A
Maximum Forward Voltage At
VF Pulse Width=300us
2% Duty Cycle
IF=10A
IF=10A
IF=20A
IF=20A
@TJ=25 ^oC
@TJ=125^oC
@TJ=25 ^oC
@TJ=125^oC
1.55
1.50
1.75
1.70
V
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
10
@TJ=100^oC
200
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance (Note 3)
TJ, TSTG Operating And Storage Temperature Range
150
55
1.5
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
uA
pF
ns
o_C/W
o_C
P1
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