MBRB2515L_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBRB2515L
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
A
C
A
C
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBRB2515L 15
10.5 15
Dimensions TO-263(D²PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=90^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage At (Note 1)
IF=19A @TJ=70^oC
IF=25A @TJ=70^oC
IF=25A @TJ=25^oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=100^oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance Per Element (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Maximum Ratings
25
150
10000
0.28
0.42
0.45
15
200
1.0
1150
-55 to +125
-55 to +150
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C
FEATURES
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliance
MECHANICAL DATA
* Case: D²PAK molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
P1
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