MBR580_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR580 thru MBR5100
High Tjm Low IRRM Schottky Barrier Diodes
A
C
C(TAB)
A
C
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR580
80
56
80
MBR5100
100
70
100
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF ^{Maximum Forward}
Voltage (Note 1)
IF=5A @TJ=25 C^o
IF=5A @TJ=125 C^o
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
5
120
10000
0.85
0.75
0.05
10
-
400
-50 to +150
-50 to +150
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
P1
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