MBR40100PT Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – High Tjm (+175oC) Schottky Barrier Diodes

MBR40100PT
High Tjm (+175^oC) Schottky Barrier Diodes
AC A
C(TAB)
A
C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VDC
V
V
MBR40100PT
100
100
Dimensions TO-247AD
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Characteristics
IF(AV) Maximum Average Forward Rectified Current @TC=145^oC
IFSM
Peak Forward Surge Current 10ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VFM
Maximum Forward
Voltage (Note 1)
IF=20A
IF=20A
IF=40A
IF=40A
@TJ=25 ^oC
@TJ=125 ^oC
@TJ=25 ^oC
@TJ=125 ^oC
Maximum Ratings
40
300
10000
0.77
0.61
0.91
0.75
IRM
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
RthJC
CT
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
1.25
15
1.25
600
-55 to +175
-55 to +175
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C