MBR3060CT Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – SCHOTTKY RECTIFIER

MBR3060CT
SCHOTTKY RECTIFIER
AC A
Dimensions TO-262
VRRM
VRMS
VDC
V
V
V
MBR3060CT 60
42
60
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=105^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
IF=15A
IF=30A
IF=15A
IF=30A
@TJ=25 ^oC
@TJ=125^oC
@TJ=125^oC
@TJ=125^oC
@TJ=25^oC
@TJ=125^oC
RthJC
CT
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
30
260
10000
0.62
0.82
0.56
0.71
0.80
45
3.25
720
-55 to +150
-55 to +150
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* Plastic package has UL flammability classification 94V-0
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any