MBR2X60 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

MBR2*60
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
MBR2*60-30
MBR2*60-40
MBR2*60-45
Symbol
VRSM
V
30
40
45
VRRM
V
30
40
45
Test Conditions
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Maximum Ratings
Unit
IFRMS
IFAVM
IFAVM
IFSM
EAS
IAR
TC=105^oC; rectangular, d=0.5
TC=105^oC; rectangular, d=0.5; per device
TVJ=45^oC; tp=10ms (50Hz), sine
IAS=20A; L=180uH; TVJ=25^oC; non-repetitive
VA=1.5^.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
VISOL
TC=25^oC
50/60Hz, RMS; IISOL<_1mA
Md mounting torque (M4); terminal connection torque (M4)
Weight typical
100
60
120
800
57
2
1000
-40...+150
150
-40...+150
150
2500
1.1-1.5/9-13
30
A
A
mJ
A
V/us
o_C
W
V~
Nm/lb.in.
g
Symbol
Test Conditions
IR
TVJ=25^oC; VR=VRRM
TVJ=125^oC; VR=VRRM
VF
IF=60A; TVJ=125^oC
IF=60A; TVJ=25^oC
IF=120A; TVJ=125^oC
Characteristic Values
typ.
max.
20
200
0.66
0.74
0.86
Unit
mA
V
RthJC
RthCH
0.1
0.8
K/W
FEATURES
* International standard package miniBLOC
* Isolation voltage 2500 V~
* 2 independent Schottky diodes in 1
package
* Very low VF
* Extremely low switching losses
* Low IRM-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses