MBR2X160-100 Datasheet, PDF (1/1 Pages) Sirectifier Semiconductors – Power Schottky Rectifer - Non isolated

MBR2x160-100
Power Schottky Rectifer - Non isolated
MBR2x160-100
VRSM
V
100
VRRM
V
100
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
IFRMS
IFAVM
IFAVM
IFSM
EAS
IAR
TC=95^oC; rectangular, d=0.5
TC=95^oC; rectangular, d=0.5; per device
TVJ=45^oC; tp=10ms (50Hz), sine
IAS=17A; L=180uH; TVJ=25^oC; non repetitive
VA=1.5^.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md mounting torque (M4); terminal connection torque (M4)
Weight typical
Symbol
Test Conditions
IR
VF
RthJC
RthCH
TVJ=25^oC; VR=VRRM
TVJ=125^oC; VR=VRRM
IF=160A; TVJ=125^oC
IF=160A; TVJ=25^oC
IF=320A; TVJ=125^oC
Maximum Ratings
200
160
320
1400
31
1.7
5000
-40...+150
150
-40...+150
410
1.1-1.5/9-13
30
Characteristic Values
typ.
max.
4
40
0.80
0.92
1.06
0.30
0.15
Unit
A
A
mJ
A
V/us
o_C
W
Nm/lb.in.
g
Unit
mA
V
K/W
FEATURES
* International standard package miniBLOC
* Very low VF
* Extremely low switching losses
* Low IRM-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses