MBR2530CT_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR2530CT 30
21
30
MBR2535CT 35
24.5 35
MBR2540CT 40
28
40
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=130^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward Voltage
(Per Leg) At (Note 1)
IF=15A
IF=15A
IF=30A
IF=30A
@TJ=25 ^oC
@TJ=125^oC
@TJ=25 ^oC
@TJ=125^oC
Maximum Ratings
30
150
10000
-
-
0.82
0.73
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
0.2
40
1.5
450
-55 to +150
-55 to +175
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C
P1
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