MBR20150CT_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR20150CT thru MBR20200CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MBR20150CT
MBR20200CT
VRSM
V
150
200
VRRM
V
150
200
Dimensions TO-220AB
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
Symbol
Test Conditions
IFRMS
IFAV
IFAV
IFSM
TC=125^oC; rectangular, d=0.5
TC=125^oC; rectangular, d=0.5; per device
TVJ=45^oC; tp=10ms (50Hz), sine
IAR VA=1.5^.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Md mounting torque
Weight typical
Maximum Ratings
20
10
20
150
0.8
10000
-65...+150
150
-65...+175
0.4...0.6
2
Unit
A
A
A
V/us
o_C
Nm
g
Symbol
Test Conditions
IR
VF
RthJC
TVJ=25^oC; VR=VRRM
TVJ=125^oC; VR=VRRM
IF=10A; TVJ=125^oC
IF=10A; TVJ=25^oC
IF=20A; TVJ=125^oC
IF=20A; TVJ=25^oC
Characteristic Values
Unit
typ.
max.
1.0
50
mA
0.80
0.90
V
0.90
1.00
2.0
K/W
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
* RoHS compliant
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
P1
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: [phone] Fax: [phone] E-mail: [e-mail]