MBR20100CT_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR20100CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MBR20100CT
VRSM
V
100
VRRM
V
100
Dimensions TO-220AB
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
Symbol
Test Conditions
IFRMS
IFAV
IFAV
IFSM
EAS
IAR
TC=165^oC; rectangular, d=0.5
TC=165^oC; rectangular, d=0.5; per device
TVJ=45^oC; tp=10ms (50Hz), sine
IAS=8A; L=180uH; TVJ=25^oC; non-repetitive
VA=1.5^.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md mounting torque
Weight typical
Symbol
Test Conditions
IR
VF
RthJC
RthCH
TVJ=25^oC; VR=VRRM
TVJ=125^oC; VR=VRRM
IF=10A; TVJ=125^oC
IF=10A; TVJ=25^oC
IF=20A; TVJ=125^oC
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
* RoHS compliant
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
Maximum Ratings
35
10
20
150
7
0.8
5000
-55...+175
175
-55...+150
90
0.4...0.6
2
Unit
A
A
mJ
A
V/us
o_C
W
Nm
g
Characteristic Values
Unit
typ.
max.
0.1
100
mA
0.65
0.80
V
0.77
0.5
1.7
K/W
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
P1
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