MBR1550 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

MBR1550CT thru MBR1560CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR1550CT 50
35
50
MBR1560CT 60
42
60
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IF=7.5A @TJ=125^oC
IF=15A @TJ=25^oC
IF=15A @TJ=125^oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
15
150
10000
0.65
0.90
0.80
1.0
50
3.0
400
-55 to +150
-55 to +175
Unit
A
A
V/us
V
mA
o_C/W
pF
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any