MBR10150CT_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR10150CT thru MBR10200CT
High Tjm Low IRRM Schottky Barrier Diodes
AC A
A
C(TAB)
C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR10150CT 150
105 150
MBR10200CT 200
140 200
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=120^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IF=5A @TJ=25 C^o
IF=5A @TJ=125 C^o
IF=10A @TJ=25 ^oC
IF=10A @TJ=125^oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=125^oC
ROJC Typical Thermal Resistance (Note 2)
TJ
TSTG
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
10
120
10000
0.95
-
0.95
0.80
0.05
15
4.5
-55 to +150
-55 to +150
Unit
A
A
V/us
V
mA
o_C/W
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
P1
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