MBR10150 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

MBR10150 thru MBR10200
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
A
C
C(TAB)
A
C
A=Anode, C=Cathode, TAB=Cathode
MBR10150
MBR10200
VRRM
VRMS
VDC
V
V
V
150 105 150
200 140 200
Dimensions TO-220AC
Symbol
Test Conditions
IFAV TC=125^oC; rectangular, d=0.5
IFSM TVJ=45^oC; tp=10ms (50Hz), sine
IAR VA=1.5^.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Md mounting torque
Weight typical
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Maximum Ratings
10
150
0.8
10000
-65...+150
150
-65...+175
0.4...0.6
2
Unit
A
A
A
V/us
o_C
Nm
g
Symbol
Test Conditions
IR
VF
RthJC
TVJ=25^oC; VR=VRRM
TVJ=125^oC; VR=VRRM
IF=10A; TVJ=125^oC
IF=10A; TVJ=25^oC
IF=20A; TVJ=125^oC
IF=20A; TVJ=25^oC
Characteristic Values
Unit
typ.
max.
1.0
50
mA
0.80
0.90
V
0.90
1.00
2.0
K/W
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses