HUR830S_16 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour High-Performance Ultra Fast Recovery Epitaxial Diodes

HUR830S
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
C(TAB)
A
A
NC
Dimensions TO-263(D²PAK)
C
A=Anode, NC= No connection, TAB=Cathode
HUR830S
VRSM
V
300
VRRM
V
300
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=130^oC; rectangular, d=0.5
TVJ=45^oC; tp=10ms (50Hz), sine
TVJ=25^oC; non-repetitive; IAS=2A; L=180uH
VA=1.5^.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md mounting torque
Weight typical
Maximum Ratings
Unit
35
10
A
60
A
0.5
mJ
0.2
A
-55...+175
175
o_C
-55...+150
60
W
0.4...0.6
Nm
2
g
P1
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