HUR2X30-100 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR2x30-100, HUR2x30-120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR2x30-100
HUR2x30-120
VRSM
V
1000
1200
VRRM
V
1000
1200
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=70^oC; rectangular, d=0.5
TVJ=45^oC; tp=10ms (50Hz), sine
TVJ=25^oC; non-repetitive; IAS=12A; L=180uH
VA=1.25^.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25^oC
VISOL
50/60Hz, RMS
IISOL<_1mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight typical
Maximum Ratings
70
30
200
14
1.2
-40...+150
150
-40...+150
110
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
Unit
A
A
mJ
A
o_C
W
V~
Nm/lb.in.
g