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HUR2060CT_16 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour High-Performance Ultra Fast Recovery Epitaxial Diodes
HUR2060CT
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
HUR2060CT
VRSM
V
600
VRRM
V
600
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=135oC; rectangular, d=0.5
TVJ=45oC; tp=10ms (50Hz), sine
TVJ=25oC; non-repetitive; IAS=0.9A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md mounting torque
Weight typical
Maximum Ratings
Unit
35
2 x 10
A
50
A
0.1
mJ
0.1
A
-55...+175
175
oC
-55...+150
60
W
0.4...0.6
Nm
2
g
P1
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