HUR2060CT Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR2060CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
HUR2060CT
VRSM
V
600
VRRM
V
600
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=135^oC; rectangular, d=0.5
TVJ=45^oC; tp=10ms (50Hz), sine
TVJ=25^oC; non-repetitive; IAS=0.9A; L=180uH
VA=1.5^.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md mounting torque
Weight typical
Maximum Ratings
Unit
35
2 x 10
A
50
A
0.1
mJ
0.1
A
-55...+175
175
o_C
-55...+150
60
W
0.4...0.6
Nm
2
g