HUR20100CT_16 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour High-Performance Ultra Fast Recovery Epitaxial Diodes

HUR20100CT, HUR20120CT
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
HUR20100CT
HUR20120CT
VRSM
V
1000
1200
VRRM
V
1000
1200
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=115^oC; rectangular, d=0.5
TVJ=45^oC; tp=10ms (50Hz), sine
TVJ=25^oC; non-repetitive; IAS=8A; L=180uH
VA=1.25^.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md mounting torque
Weight typical
Maximum Ratings
Unit
35
2 x 10
A
40
A
6.9
mJ
0.8
A
-55...+175
175
o_C
-55...+150
60
W
0.4...0.6
Nm
2
g
P1
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