BAT41 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

BTB41
Discrete Triacs(Non-Isolated)
Dimensions TO-247AD
T2
G
T1
BT%41-200
BT%41-400
BT%41-600
BT%41-800
BT%41-1000
BT%41-1200
VDR055M VDS056M
V
V
200
220
400
450
600 700
800
900
1000
1200
1100
1300
ABSOLUTE MAXIMUM RATINGS
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4 6.2
1.65 2.13
- 4.5
1.0 1.4
10.8 11.0
4.7 5.3
0.4 0.8
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Parameter
Value
Unit
I_{T(RMS) RMS on-state current (full sine wave)}
I_TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I^²t
I^²t Value for fusing
dI/dt
Critical rate of rise of on-state current
I_G = 2 x I _GT , tr <_ 100 ns
V_DSM/V _RSM
Non repetitive surge peak off-state
voltage
TO-247AD
F = 60 Hz
F = 50 Hz
Tc = 80 °C
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
41
420
400
880
50
V_DRM/V_RRM
+ 100
A
A
A^²s
A/µs
V
I_GM
P_G(AV)
T_stg
T_j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
8
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
I_GT (1)
I - II - III
IV
MAX.
50
100
V_GT
V_D = 12 V
R_L = 33 Ω
ALL
MAX.
1.3
V_GD V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C _ALL
MIN.
0.2
I_H (2) I_T = 500 mA
MAX.
80
I_L
I_G = 1.2 I_GT
I- III-IV _MAX.
70
II
160
dV/dt (2) V_D = _{67 %} V_{DRM gate open Tj = 125°C}
MIN.
500
(dI/dt)c (2) Without snubber
Tj = 125°C
MIN.
10
Unit
mA
V
V
mA
mA
V/µs
A/ms
P1
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