SG75S12S Datasheet, PDF (1/7 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG75S12S
SG75S12S
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A 31.50
B
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
4.09
D
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
4.09
F 14.91
4.29
15.11
0.161
0.587
0.169
0.595
G 30.12
H 37.80
30.30
38.20
1.186
1.489
1.193
1.505
J 11.68
K
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
0.76
M 12.60
0.84
12.85
0.030
0.496
0.033
0.506
N 25.15
O
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
4.95
Q 26.54
5.97
26.90
0.195
1.045
0.235
1.059
IC
VCE
R
3.94
S
4.72
4.42
4.85
0.155
0.186
0.174
0.191
A
V
T 24.59
U -0.05
25.07 0.968
0.1 -0.002
0.987
0.004
75
1200
V
3.30
W 0.780
4.57
0.830
0.130
19.81
0.180
21.08
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
(Tvj = 25°C, unless specified otherwise)
Symbol
Conditions
Values
VCES
VGE shorted
1200
IC
Ths = 70°C
75
ICM
Pulse: tp = 1ms, Ths = 70°C
150
VGES
+_20
Ptot
Ths = 25°C per switch
340
SwSOA
IC = 150A, VCEM = 1200V, VCC <_ 1000V,
VGE = +_15V, Tvj = 125°C
voltages measured on auxiliary terminals
SCSOA
VCC = 900V, VCEM = 1200V, tp = 10µs,
VGE = +_15V, Tvj = 125°C
IF
75
IFM
Pulse: tp = 1ms, Ths = 70°C
150
Unit
V
A
A
V
W
A
A
Maximum Rated Values (cont.)
(Tvj = 25°C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Junction Temperature
Tvj
-40 ~ 150
°C
Storage Temperature
Ttstg / Tcop
-40 ~ 125
°C
Isolation Voltage
Viso
1min, f = 50Hz
2500
V