SG50N06S Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG50N06S, SG50N06DS
Discrete IGBTs
EC
E
G
SG50N06S
Dimensions SOT-227(ISOTOP)
G=Gate, C=Collector,
E=Emitter
SG50N06DS
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
VGES Continuous
VGEM Transient
IC25 TC=25^oC
IC90 TC=90^oC
ICM TC=25^oC, 1 ms
SSOA VGE=15V; TVJ=125^oC; RG=10
(RBSOA) Clamped inductive load, L=30uH
PC TC=25^oC
TJ
TJM
Tstg
Md Mounting torque
Terminal connection torque(M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
75
50
200
ICM=100
@ 0.8 VCES
250
-55...+150
150
-55...+150
1.5/13
1.5/13
30
300
Unit
V
V
A
A
W
o_C
Nm/Ib.in.
g
o_C
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC=250uA; VGE=0V
IC=250uA; VCE=VGE
VCE=0.8VCES;
VGE=0V;
TJ=125^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
600
V
2.5
5
V
200
uA
1
mA
±100
nA
2.5
V