SG15N12P Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG15N12P, SG15N12DP
Discrete IGBTs
E
C
G
G=Gate, C=Collector, E=Emitter
SG15N12P
SG15N12DP
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
VGES Continuous
VGEM Transient
IC25 TC=25^oC
IC90 TC=90^oC
ICM TC=25^oC, 1 ms
SSOA VGE=15V; TVJ=125^oC; RG=10
(RBSOA) Clamped inductive load
PC TC=25^oC
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
Maximum Ratings
1200
1200
±20
±30
30
15
60
ICM=40
@ 0.8 VCES
150
-55...+150
150
-55...+150
300
0.45/4
0.55/5
4
Unit
V
V
A
A
W
o_C
o_C
Nm/Ib.in.
g
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC=250uA; VGE=0V
IC=250uA; VCE=VGE
VCE=VCES; TJ=25^oC
VGE=0V;
TJ=125^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
600
V
2.5
5.0
V
100
uA
3.5
mA
±100
nA
3.2
V