RSM5853P Datasheet, PDF (1/5 Pages) Sirectifier Global Corp. – P-Channel 20Volt (D-S) MOSFET With Schottky Diode

ELECTRONIC
RSM5853P
P-Channel 20Volt (D-S) MOSFET With Schottky Diode
□ Application
-These miniature surface mount MOSFET utilize a high cell density trench
process to provide low RDS(on) and to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered
products such as coputers, printers, PCMCIA cards, cellular and cordless
telephones.
CF 1206-8 TOP VIEW
A
1
A
2
S
3
G
4
8
K
7
K
6
D
5
D
□ Feature
-Low RDS(on) provides higger efficiency and extends battery life
-Low thermal impedance copper leadframe CF 1206-8 saves board space
-Fast switching speed
-High performance trench technology
□ Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
TA = 25 ºC
Continuous Drain Current @ TJ = 150ºC (MOSFET) (Note 1)
TA = 70 ºC
Pulsed Drain Current (MOSFET) (Note 2)
Continuous Source Current (MOSFET Diode Conduction) (Note 1)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET) (Note 1)
TA = 25 ºC
TA = 70 ºC
Maximum Power Dissipation (Schottky) (Note 1)
TA = 25 ºC
TA = 70 ºC
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
t ≦ 5sec
Steady State
Note: 1.Surface Mounted on 1” X 1” FR-4 Board
2.Pulse width limited by maximum junction temperature
G
SYMBOL
VDS
VKA
VGS
ID
IDM
IS
IF
IFM
PD
TJ , TSTG
RθJA
S
K
D
A
MAXIMUM
UNIT
-20
20
V
±8
±2.5
±1.9
±10
A
-1.6
0.5
8
2.1
1.1
W
1.3
0.68
-55 to +150
ºC
60
ºC/W
110
September 2008 / Rev.6.2
http:// www.sirectsemi.com