PS60N60 Datasheet, PDF (1/5 Pages) Sirectifier Global Corp. – N-Channel Enhancement Mode Field Effect Transistor - 60Amp 60Volt

ELECTRONIC
PS60N60
N-Channel Enhancement Mode Field Effect Transistor
□ Application
-Servomotor control
-Power MOSFET gate drivers
-Other switching applications
- 60Amp 60Volt
□ Feature
-Small surface mounting type
-High density cell design for low RDS(ON)
-Suitable for high packing density
-Rugged and reliable
-High saturation current capability
-Voltage controlled small signal switch
□ Circuit
D
G
□ Construction
S
-N-Channel Enhancement
□ Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuos @ TA = 125ºC (Note 1)
-Pulsed (Note 2)
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operting Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note: 1.Surface Mounted on FR-4 Board, t≦2%
2.Pulse Test : 380μs pulse width, 2% duty cycle
SYMBOL
VDS
VGS
ID
IDM
IS
PD
TJ , TSTG
RθJA
PS60N60
UNIT
60
V
± 20
V
60
A
300
60
A
110
W
-55 to +175
ºC
50
ºC/W
June 2009 / Rev.6.4
http:// www.sirectsemi.com