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MBR3060CT Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – SCHOTTKY RECTIFIER | |||
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ELECTRONIC
MBR3060CT
Power Schottky Rectifier - 30Amp 60Volt
â¡ Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
-High operation junction temp up to 175ºC Excellent EMI performance
â¡ Application
-Switching-Mode Power Supply
â¡ Absolute maximum ratings
TO-220AB
B
C
K
L
M
D
A
E
Symbol Ratings Unit
IF(AV)
30
A
VRRM
60
V
IFSM
350
A
Conditions
Average Forward Current
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
F
O
G
I
J
IRRM
2.0
A
VF(max) 0.62
V
Tj -65 to +175 ºC
Peak repetitive reverse surge current
per leg at tp=2μs, 1KHz
Forward Voltage Drop
Operating Temperature Range
HH
N
A1
K
A2
Tstg -65 to +175 ºC
Storage Temperature Range
â¡ Electrical characteristics
Parameters
Symbol Ratings
Maximum Instantaneous
VF
Forward Voltage
0.78V
0.62V
Maximum Reverse Leakage
IR
Current
0.01mA
10mA
Maximum Voltage Rate of
Change
dv/dt 10,000 V/μs
Typical Thermal Resistance,
Rθ (j-c)
Junction to Case
2.2 ºC/W
Conditions
Tc = 25ºC
Tc = 125ºC
Tc = 25ºC
Tc = 125ºC
Rated VR
Per diode
DIMENSIONS
DIM INCHES
MM
NOTE
MIN MAX MIN MAX
A .579 .606 14.70 15.40
B .392 .411 9.95 10.45
C .104 .116 2.65 2.95
D .248 .272 6.30 6.90
E .325 .350 8.25 8.90
F .126 .157 3.20 4.00
G .492 .551 12.50 14.00
H .096 .108 2.45 2.75
I .028 .039 0.70 1.00
J .010 .022 0.25 0.55
K .146 .157 3.70 4.00
L .167 .187 4.25 4.75
M .045 .057 1.15 1.45
N .089 .114 2.25 2.90
O .047 .055 1.20 1.40
Note: Pulse Test : 380μs pulse width, 2% duty cycle
August 2008 / Rev.6.1
1
http:// www.sirectsemi.com
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