BTA15 Datasheet, PDF (1/4 Pages) Sirectifier Global Corp. – Discrete Triacs(Non-Isolated/Isolated)

BTB/BTA15
T2
G
T1
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
Inches
Milimeter
Min. Max. Min. Max.
A 0.500 0.550 12.70 13.97
B 0.580 0.630 14.73 16.00
G
C 0.390 0.420 9.91 10.66
T2
D 0.139 0.161 3.54 4.08
T1
E 0.230 0.270 5.85 6.85
F 0.100 0.125 2.54 3.18
G 0.045 0.065 1.15 1.65
H 0.110 0.230 2.79 5.84
J 0.025 0.040 0.64 1.01
K 0.100 BSC 2.54 BSC
M 0.170 0.190 4.32 4.82
N 0.045 0.055 1.14 1.39
Q 0.014 0.022 0.35 0.56
R 0.090 0.110 2.29 2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
I_{T(RMS) RMS on-state current (full sine wave)}
TO-220AB
Tc = 100°C
I_TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I^²t
I^²t Value for fusing
dI/dt
Critical rate of rise of on-state current
I_G = 2 x I _GT , tr <_ 100 ns
V_DSM/V _RSM
Non repetitive surge peak off-state
voltage
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
I_GM
P_G(AV)
T_stg
T_j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
Value
15
168
160
144
50
V_DRM/V_RRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
I_GT (1)
V_GT
V_D = 12 V
R_L = 33 Ω
I - II - III
I - II - III
V_GD V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C I - II - III
I_H (2) I_T = 500 mA
I_L
I_G = 1.2 I_GT
I - III
II
dV/dt (2) V_D = _{67 %} V_{DRM gate open Tj = 125°C}
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
BW
35
50
1.3
0.2
35
50
50
70
60
80
500
1000
8.5
14
Unit
A
A
A^²s
A/µs
V
A
W
°C
Unit
mA
V
V
mA
mA
V/µs
A/ms