2N7002PT Datasheet, PDF (1/5 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

ELECTRONIC
2N7002PT
N-Channel Enhancement Mode Field Effect Transistor
□ Application
-Servomotor control
-Power MOSFET gate drivers
-Other switching applications
□ Feature
-Small surface mounting type
-High density cell design for low RDS(ON)
-Suitable for high packing density
-Rugged and reliable
-High saturation current capability
-Voltage controlled small signal switch
□ Construction
-N-Channel Enhancement
□ Circuit
D
- 0.25Amp 60Volt
SOT-23
.055(1.40)
.047(0.85)
.103(2.64)
.086(2.20)
.028(0.70)
.020(0.50)
.045(1.15)
.033(0.85)
G
S
□ Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS≦1MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp<50μs)
Maximum Drain Current - Continuos
TA = 25ºC
- Pulsed
TA = 70ºC
Maximum Power Dissipation
TA = 25ºC
TA = 70ºC
Operting and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16” from
Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
SYMBOL
VDSS
VDGR
VGSS
ID
PD
TJ , TSTG
TL
RθJA
2N7002PT
UNIT
60
V
60
V
± 20
V
± 40
250
mA
190
350
mW
220
-55 to +150
mW
300
ºC
357
ºC/W
September 2006 / Rev.3