SLD-68EBG1 Datasheet, PDF (1/1 Pages) Silonex Inc. – Integral Infrared Rejection Filter Planar Photodiode

Features
• Planar Photodiode
• Integral IR Rejection Filter
• Low capacitance
• Fast switching time
• Low leakage current
• Linear response vs irradiance
• TO-46 base with epoxy dome lens
• Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the visible light spectrum of
received energy. This diode incorporates a BG filter
that rejects infrared wavelengths and approximates
the response of the human eye. Photodiodes may
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
light intensity.
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
Soldering Temperature (3)
-20°C to +75°C
-20°C to +75°C
260°C
SLD-68EBG1
Integral Infrared Rejection Filter
Planar Photodiode
45°
ø 5.3
25.4 Min.
3.0
4.2
Epoxy
Filter _Chip
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
2.5
0.50-0.52
Anode +
Cathode -
(Common to case)
Dimensions in mm. (+/- 0.13)
Directional Sensitivity Characteristics
40° 30° 20° 10° 1.0
50°
0.8
Half Angle = 40°
0.6
60°
0.4
70°
0.2
80°
90°
0.0
100°
1.0 0.8 0.6 0.4
20° 40° 60° 80° 100° 120°
Electrical Characteristics (T_A=25°C unless otherwise noted)
Symbol
Parameter
MIN TYP
I_SC
Short Circuit Current
7.5 11.0
V_OC
Open Circuit Voltage
0.40
I_D Reverse Dark Current:
SLD-68EBG1A
SLD-68EBG1B
SLD-68EBG1C
SLD-68EBG1D
SLD-68EBG1E
C_J
Junction Capacitance
40
t_R
Rise Time
1.0
t_F
Fall Time
1.5
TC_I
Temp. Coef., I_SC
+0.2
V_BR
Reverse Breakdown Voltage
50
λ_P Maximum Sensitivity Wavelength
550
λ_R
Sensitivity Spectral Range
400
θ_1/2
Acceptance Half Angle
40
Notes: (1) Ee = light source @ 2854 °K
(2) Ee = Light source @ λ = 580 nm
(3) >2 mm from case for <5 sec.
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: [phone]
Fax: [phone]
MAX
UNITS TEST CONDITIONS
µA VR=0V, Ee=25mW/cm² (1)
V Ee=25mW/cm² (1)
100
nA V_R=100mV, Ee=0
100
nA V_R=5V, Ee=0
10
nA V_R=5V, Ee=0
1
nA V_R=5V, Ee=0
250
pA V_R=5V, Ee=0
pF V_R=0, Ee=0, f=1MHz
µs V_R=10V, R_L=1kΩ (2)
µs V_R=10V, R_L=1kΩ (2)
%/°C (1)
V I_R=100µA
nm
700 nm
deg (off center-line)
Specifications subject to change without notice
102647 REV 2
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: [phone]
Fax: [phone]
QF-84