SLCD-61N1 Datasheet, PDF (1/1 Pages) Silonex Inc. – Solderable Planar Photodiode

SLCD-61N1
Solderable Planar Photodiode
Features
• Visible to IR spectral irradiance range
• High reliability
• Oxide passivation
• Linear short circuit current
• Low capacitance, high speed
• Available in arrays where # indicates number of
elements ( maximum of 9 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency. They are particularly
suited to power conversion applications due to their
low internal impedance, relatively high shunt
impedance, and stability. These devices also provide
a reliable, inexpensive detector for applications such
as light beam sensing and instrumentation. The
electrical characteristics below are per element. In
the multi-element arrays the cathodes are common to
all elements.
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
-40°C to +125°C
-40°C to +125°C
0.4
5.08
2.54
Anode
Cathode
Sensitive Area
(10.4 sq. mm.)
Dimensions in mm. (+/- 0.13)
Also available with leads as part number SLSD-71N1
Directional Sensitivity Characteristics
40°
30° 20° 10° 1.0
50°
0.8
Half Angle = 60°
60°
70°
80°
90°
100°
1.0 0.8 0.6 0.4
0.6
0.4
0.2
0.0
20° 40° 60° 80° 100° 120°
Electrical Characteristics (T_A=25°C unless otherwise noted)
Symbol
Parameter
Min Typ Max
I_SC
Short Circuit Current
0.4
0.5
V_OC
Open Circuit Voltage
0.40
I_D
Reverse Dark Current
1.7
C_J
Junction Capacitance
0.4
S_λ
Spectral Sensitivity
0.55
V_BR
Reverse Breakdown Voltage
20
λ_P Maximum Sensitivity Wavelength
930
λ_R
Sensitivity Spectral Range
400
1100
θ_1/2
Acceptance Half Angle
60
Specifications subject to change without notice
Units
mA
V
µA
nF
A/W
V
nm
nm
deg
Test Conditions
V_R=0V, Ee=25mW/cm² (1)
Ee=25mw/cm² (1)
V_R=5V, Ee=0
V_R=0V, Ee=0, f=1MHz
λ=940nm
I_R=100µA
104117 REV 0
Notes: (1) Ee = light source @ 2854 °K