SSFM3008L Datasheet, PDF (4/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Typical electrical characteristics
100
10V
6V
80
7V
4.5V
60
4V
40
3.5V
20
0
0
1
2
3
4
5
VDS,drain to source voltage(V)
Figure 1: Typical Output Characteristics
30
25
ID=30A
20
15
125℃
10
5
25℃
0
2 3 4 5 6 7 8 9 10
VGS,gate to source voltage(V)
Figure 3: On-Resistance vs. Gate-Source
Voltage
10
9
8
7
6
5
VDS=15V
4
ID=20A
3
2
1
0
0
5
10 15 20 25 30 35
QG,gate charge(nC)
Figure 5: Gate-Charge Characteristics
SSFM3008L
100
90
80
VDS=5V
70
60
50
40
30
20
125℃
10
0
25℃
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS,gate to source voltage(V)
Figure 2: Typical Transfer Characteristics
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
125℃
25℃
1.E-05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSD,source to drain voltage(V)
Figure 4: Body-Diode Characteristics
3000
2500
2000
Ciss
1500
1000
500
Crss
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
Coss=Cds+Cgd
Crss=Cgd
Coss
0
0
5
10
15
20
25
VDS, drain to source voltage(V)
Figure 6: Capacitance Characteristics
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.0
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