SSF7610 Datasheet, PDF (2/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF7610
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.5
62
40
Units
°C /W
°C /W
°C /W
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol Parameter
V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
Qgs
Gate-to-Source charge
Qgd
Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Min.
75
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
6.5
11.1
—
2.06
—
—
—
—
80
19
27
25
20
71
47
5961
452
169
Max.
—
10
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 40A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 75V,VGS = 0V
TJ = 125°C
VGS =25V
VGS = -25V
ID = 80A,
VDS=64V,
VGS = 10V
VGS=10V, VDS=38V,
RGEN=6Ω,ID=42A
VGS = 0V
VDS = 30V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
85
—
—
340
—
0.8
1
—
37
—
—
50
—
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=20A, VGS=0V
TJ = 25°C, IF =40A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2014.01.17
www.silikron.com
Version : 1.0
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