SSF7509J7 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF7509J7
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
—
Max.
1.31
62
Units
℃/W
℃/W
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
V_(BR)DSS
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
80
—
—
1
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
Typ.
—
7.5
13
—
1.02
—
—
—
—
93.6
20.2
33.3
17.3
15.2
52
19
4373
352
306
Max.
—
9
16
3
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
V_GS = 0V, ID = 250μA
V_GS=10V,I_D = 30A
T_J = 125℃
V_DS = V_GS, I_D = 250μA
T_J = 125℃
V_DS = 80V,V_GS = 0V
T_J = 125℃
V_GS =20V
V_GS = -20V
I_D = 30A,
V_DS=30V,
V_GS = 10V
V_GS=10V, VDS=30V,
R_L=15Ω,
R_GEN=2.5Ω
V_GS = 0V
V_DS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
70
—
—
280
—
0.85
1.3
—
36
—
—
62
—
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I_S=30A, V_GS=0V
T_J = 25°C, I_F =45A, di/dt =
100A/μs
©Silikron Semiconductor CO., LTD.
2014.12.30
www.silikron.com
Version: 1.0
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