SSF7504H Datasheet, PDF (2/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF7504H
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case ③
Junction-to-ambient (t ≤ 10s)④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.45
62
40
Units
℃/W
℃/W
℃/W
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
Qgs
Gate-to-Source charge
Qgd
Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Min.
75
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
3.9
6.8
—
2.17
—
—
—
—
282
51
110
29
85
93
81
10747
833
788
Max.
—
4.5
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
nS
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =75V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 40A,
VDS=60V,
VGS = 10V
VGS=10V, VDS =38V,
RL=0.95Ω,
RGEN=1.2Ω
ID =40A
VGS = 0V
VDS = 25V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ. Max.
— 220 ①
—
—
880
—
0.84 1.3
—
53
—
—
114
—
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=30A, VGS=0V
TJ = 25°C, IF =40A, di/dt =
100A/μs
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.1
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