SSF1006 Datasheet, PDF (2/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF1006
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case ③
Junction-to-ambient (t ≤ 10s)④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.46
62
40
Units
℃/W
℃/W
℃/W
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
100
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
4.6
9.23
—
2.22
—
—
—
—
242
48
79
30
24
115
43
9807
672
583
Max.
—
6
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
nS
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 100V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS =30V,
RL=15Ω,
RGEN=2.5Ω
ID =30A
VGS = 0V
VDS = 25V
ƒ =500KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
200
—
—
800
—
0.88
1.3
—
46
—
—
88
—
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=60A, VGS=0V
TJ = 25°C, IF =75A, di/dt =
100A/μs
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 2.3
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