 English |
|
|
|
|
|
|
|
| SSTS3045CT Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
| |||
|
SSTS3045CT/CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
2Ã15A
45V
150â
0.55V
Features and Benefits:
 High Junction Temperature
 High ESD Protection
 High Forward & Reverse Surge capability
TO220
SSTS3045CT
TO220F
SSTS3045CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
45
V
VR(RMS)
IF(AV)
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
31
V
15
A
30
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
2
A
TJ
Maximum operation Junction Temperature Range
-55~150
â
Tstg Storage Temperature Range
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2
4
Unit
â /W
â /W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
45
V
VF
Forward Voltage Drop
0.55
V
0.53
IR
Leakage Current
0.5
mA
50
Test Condition
IR=0.5mA
IF=15A, TJ=25â
IF=15A, TJ=125â
VR=45V, TJ=25â
VR=45V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.3.26
www.silikron.com
Version: 1.0
page 1of6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese