 English |
|
|
|
|
|
|
|
| SSTS3040CT Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
| |||
|
SSTS3040CT
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
30A
40V
150â
0.53V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO-220
SSTS3045CT
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Per diode
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
40
28
30
200
2
-55~150
-55~150
Thermal Resistance
Symbol
Characterizes
Maximum Thermal Resistance Junction To
RθJC
Case(per leg)
TO220
Value
2
Unit
V
V
A
A
A
â
â
Unit
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
40
V
VF
Forward Voltage Drop
0.53
V
0.48
IR
Leakage Current
0.5
mA
50
Test Condition
IR=0.5mA
IF=30A, TJ=25â
IF=30A, TJ=125â
VR=40V, TJ=25â
VR=40V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.9.20
www.silikron.com
V1.0(Preliminary)
page 1of5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese