 English |
|
|
|
|
|
|
|
| SSTS30100CT Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature High ESD Protection High Forward & Reverse Surge capability | |||
| |||
|
Main Product Characteristics:
IF
2Ã15A
VRRM
100V
Tj(max)
150â
Vf(typ)
0.64V
TO220
Features and Benefits:
SSTS30100CT
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
SSTS30100CT/CTF
TO220F
SSTS30100CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
100
V
VR(RMS) RMS Reverse Voltage
70
V
IF(AV) Average Forward Current
Per diode
Per device
15
A
30
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Thermal Resistance
0.5
A
-55~150
â
-55~150
â
Symbol
Characterizes
Value
Unit
RθJC Maximum Thermal Resistance Junction To TO220
RθJC Case(per leg)
TO220F
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
2.3
â/W
5.3
â/W
Test Condition
VR
Reverse Breakdown Voltage 100
V IR=0.5mA
0.5
V IF=5A, TJ=25â
0.55
V IF=7.5A, TJ=25â
0.61
V IF=10A, TJ=25â
VF
Forward Voltage Drop
0.7 0.8
0.45
V IF=15A, TJ=25â
V IF=5A, TJ=125â
0.52
V IF=7.5A, TJ=125â
0.57
V IF=10A, TJ=125â
0.64 0.7 V IF=15A, TJ=125â
IR
Leakage Current
0.1
20
mA
VR=100V, TJ=25â
VR=100V, TJ=125â
©Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page 1of6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese