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| SSTS20U60P5 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSTS20U60P5
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
60V
150â
0.5V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO-277
SSTS20U60P5-HF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
60
V
42
V
20
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
0.5
A
-55~150
â
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJA Maximum Thermal Resistance Junction To Ambient
Value
73
Unit
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
60
V
0.33 0.35
VF
Forward Voltage Drop
0.5 0.55
V
0.21
0.5
IR
Leakage Current
0.1 0.2
mA
30 100
Test Condition
IR=0.5mA
IF=3A, TJ=25â
IF=20A, TJ=25â
IF=3A, TJ=125â
IF=20A, TJ=125â
VR=60V, TJ=25â
VR=60V, TJ=125â
©Silikron Semiconductor CO., LTD.
2014.7.23
www.silikron.com
Version: 1.0
page 1of5
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