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| SSTS20L60CT Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSTS20L60CT/CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
2Ã10A
60V
150â
0.6V
Features and Benefits:
 High Junction Temperature
 High ESD Protection
 High Forward & Reverse Surge capability
TO220
SSTS20L60CT
TO220F
SSTS20L60CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
60
V
VR(RMS)
IF(AV)
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
42
V
10
A
20
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
180
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
â
Tstg Storage Temperature Range
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2
4
Unit
â /W
â /W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
60
V
VF
Forward Voltage Drop
0.6
V
0.55
IR
Leakage Current
0.1
mA
20
Test Condition
IR=0.5mA
IF=10A, TJ=25â
IF=10A, TJ=125â
VR=60V, TJ=25â
VR=60V, TJ=125â
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 2.0
page 1of6
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