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| SSTS20L100CT Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSTS20L100CT/CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
2Ã10A
100V
150â
0.7V
TO220
SSTS20L100CT
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO220F
SSTS20L100CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
100
V
VR(RMS)
IF(AV)
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
70
V
10
A
20
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
â
Tstg Storage Temperature Range
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2.3
5.3
Unit
â/W
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage 100
V
VF
Forward Voltage Drop
0.7
V
0.6
IR
Leakage Current
0.1
mA
20
Test Condition
IR=0.5mA
IF=10A, TJ=25â
IF=10A, TJ=125â
VR=100V, TJ=25â
VR=100V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.8.20
www.silikron.com
Version: 2.1
page 1of6
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