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| SSTS20100R Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSTS20100R/RF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
100V
150â
0.8V
Features and Benefits:
 High Junction Temperature
 High ESD Protection
 High Forward & Reverse Surge capability
TO126
SSTS20100R
TO126F
SSTS20100RF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
100
V
VR(RMS) RMS Reverse Voltage
70
V
IF(AV) Average Forward Current
20
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
150
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
â
Tstg Storage Temperature Range
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO126
TO126F
Value
5
13
Unit
â /W
â /W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage 100
V
VF
Forward Voltage Drop
0.8
V
0.75
IR
Leakage Current
0.1
mA
20
Test Condition
IR=0.5mA
IF=20A, TJ=25â
IF=20A, TJ=125â
VR=100V, TJ=25â
VR=100V, TJ=125â
©Silikron Semiconductor CO., LTD.
2011.8.19
www.silikron.com
Version: 1.0
page 1of6
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