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| SSTS20100D Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSTS20100D
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
100V
150â
0.85V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO252
SSTS20100D
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability.
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
100
V
VR(RMS) RMS Reverse Voltage
70
V
IF(AV) Average Forward Current
20
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
150
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
2
A
-55~150
â
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To Case
RθJC (per leg)
TO252
Value
2
Unit
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage 100
V
VF
Forward Voltage Drop
0.85
V
0.78
IR
Leakage Current
0.2
mA
50
Test Condition
IR=0.5mA
IF=20A, TJ=25â
IF=20A, TJ=125â
VR=100V, TJ=25â
VR=100V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.4.26
www.silikron.com
Version: 2.0
page 1of5
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