SSS1206H Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced Process Technology

Main Product Characteristics
V_DSS
120V
R_DS(on) 4.7mΩ (typ.)
I_D
180A ①
Features and Benefits
TO-247
„ Advanced Process Technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175℃ operating temperature
SSS1206H
Marking and pin
Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
180 ①
130 ①
670
375
2.5
120
± 20
1148
87.5
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.11.21
www.silikron.com
Version : 1.0
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