SSS1004A7 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced Process Technology

Main Product Characteristics
V_DSS
100V
R_DS(on) 3.0mΩ (typ.)
I_D
180A ①
Features and Benefits
TO-263-7L
 Advanced Process Technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
SSS1004A7
1, Gate
2~3,5~7 Source
4,8 Drain
Pin Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
180 ①
130 ①
670
375
2.5
100
± 20
1045
83.5
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.04.18
www.silikron.com
Version : 1.2
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