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| SSMD60200PT Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSMD60200PT
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
2Ã30A
200V
175â
0.76V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO247
SSMD60200PT
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
200
V
VR(RMS) RMS Reverse Voltage
140
V
IF(AV) Average Forward Current
Per diode
Per device
30
A
60
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
300
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
0.5
A
-55~175
â
-55~175
â
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC Maximum Thermal Resistance Junction To Case (per leg)
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
1.2
â/W
Test Condition
Reverse Breakdown
VR
Voltage
200
V IR=0.5mA
VF
Forward Voltage Drop
IR
Leakage Current
0.85
IF=15A, TJ=25â
0.92 V IF=30A, TJ=25â
0.76
IF=30A, TJ=125â
0.1
5
mA
VR=200V, TJ=25â
VR=200V, TJ=125â
trr
Reverse recovery time
Irrm Peak recovery current
28 35
1.2 2
ns
A IF=30A,di/dt=100A/us,VR=30V
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 1.0
page 1of5
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