 English |
|
|
|
|
|
|
|
| SSMD60200CT Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
| |||
|
SSMD60200CT/SSMD60200CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
60A
200V
175â
0.95V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO220
SSMD60200CT
TO220F
SSMD60200CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
200
V
VR(RMS) RMS Reverse Voltage
140
V
IF(AV) Average Forward Current
60
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
300
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ
Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
0.5
A
-55~175
â
-55~175
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2
4
Unit
â/W
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage 200
V
VF
Forward Voltage Drop
0.95
V
0.9
IR
Leakage Current
0.1
mA
5
Test Condition
IR=0.5mA
IF=30A, TJ=25â
IF=30A, TJ=125â
VR=200V, TJ=25â
VR=200V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.3.13
www.silikron.com
Version: 1.0
page 1of6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese