SSMD60150PT Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature

SSMD60150PT
Main Product Characteristics:
IF
VRRM
T_j(max)
Vf(max)
2×30A
150V
175℃
0.74V
Features and Benefits:
 High Junction Temperature
 High ESD Protection
 High Forward & Reverse Surge capability
TO247
SSMD60150PT
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
V_RRM Peak Repetitive Reverse Voltage
150
V
V_R(RMS) RMS Reverse Voltage
115
V
I_F(AV) Average Forward Current
Per diode
Per device
30
A
60
A
I_FSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
300
A
I_RRM Peak Repetitive Reverse Surge Current(Tp=2us)
T_J
Maximum operation Junction Temperature Range
T_stg Storage Temperature Range
0.5
A
-55~175
℃
-55~175
℃
Thermal Resistance
Symbol
Characterizes
Value
Unit
R_θJC Maximum Thermal Resistance Junction To Case (per leg)
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
1.2
℃/W
Test Condition
Reverse Breakdown
V_R
Voltage
150
V I_R=0.5mA
V_F
Forward Voltage Drop
I_R
Leakage Current
0.82
I_F=15A, T_J=25℃
0.89 V I_F=30A, T_J=25℃
0.74
I_F=30A, T_J=125℃
0.1
5
mA
V_R=150V, T_J=25℃
V_R=150V, T_J=125℃
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 1.0
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