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| SSMD4045PT Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature | |||
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SSMD4045PT
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
2Ã20A
45V
150â
0.55V
Features and Benefits:
ï® High Junction Temperature
ï® High ESD Protection
ï® High Forward & Reverse Surge capability
TO247
SSMD4045PT
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
45
V
32
V
20
A
40
A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
250
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
â
Tstg Storage Temperature Range
-55~150
â
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To Case (per leg)
Value
1.2
Unit
â/W
Electrical Characterizes @TA=25â unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
Test Condition
Reverse Breakdown
VR
Voltage
45
V IR=0.5mA
VF
Forward Voltage Drop
IR
Leakage Current
0.5
IF=10A, TJ=25â
0.55 V IF=20A, TJ=25â
0.5
IF=20A, TJ=125â
0.2
100
mA
VR=45V, TJ=25â
VR=45V, TJ=125â
©Silikron Semiconductor CO., LTD.
2012.3.13
www.silikron.com
Version: 1.0
page 1of5
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